The era of big data requires advanced strategies for achieving a higher density of circuits devices while entailing less sophisticated fabrication techniques 2, 8, 9. The miniaturization of integrated circuits and the relentless increase of device densities, which is described by the Moore’s law, have made it critical to constantly render breakthroughs in designs to overcome any associated manufacturing challenges 1, 2, 3, 4, 5, 6, 7. The foundry-line-compatible one-transistor design has great potential for immediate and widespread applications in next-generation multifunctional electronics. In particular, our design could mimic the artificial synapses in three dimensions while simultaneously being implemented by standard silicon-on-insulator process technology. More importantly, the proposed configuration could simultaneously provide the multi-functionalities of logic gates, memory, and artificial synapses. Here, we propose a silicon-foundry-line-based multi-gate one-transistor design to simplify the conventional multi-transistor logic gates into one-transistor gates, thus reducing the circuit footprint by at least 40%. However, these strategies are still far from being widely applicable owing to their incompatibility with the modern silicon-based foundry lines. Let’s take an example to illustrate the use of floating gate transistors in non-volatile memory devices.Logic gates are fundamental components of integrated circuits, and integration strategies involving multiple logic gates and advanced materials have been developed to meet the development requirements of high-density integrated circuits. Usage Example Of Floating Gate Transistor The versatility, reliability, and non-volatile nature of floating gate transistors have made them indispensable in modern data storage technologies. Its unique design, featuring an insulated floating gate, allows for the storage and retention of charges, making it an integral component in EEPROMs and flash memory. These transistors have revolutionized the field of data storage, enabling the development of compact and efficient memory devices.Ī floating gate transistor is a specialized MOSFET used in non-volatile memory applications. The widespread use of floating gate transistors in EEPROMs and flash memory can be attributed to their reliability, high-density storage capabilities, and low power consumption. Additionally, floating-gate transistors can be programmed and erased multiple times, allowing for rewritable memory. This makes them suitable for devices that require persistent data storage. They provide non-volatile storage, meaning that the stored data is retained even when power is removed. To erase the stored data, a process called Fowler-Nordheim tunneling is employed, which removes the charge from the floating gate.įloating-gate transistors offer several advantages for memory applications. This trapped charge affects the threshold voltage of the transistor, allowing it to function as a memory cell. By applying a high voltage to the control gate, electrons are accelerated and injected into the floating gate, causing it to become negatively charged. The operation of a floating gate transistor involves a process called hot electron injection. This unique design enables the floating gate transistor to store and retain charges, making it ideal for data storage applications.

Unlike regular transistors, a floating gate transistor possesses an insulated gate, known as the floating gate, which is isolated from the rest of the transistor.

Floating Gate Transistor in Flash MemoryĪ floating gate transistor, also known as a floating gate MOSFET, is a crucial component in non-volatile memory devices like EEPROMs and flash memory.

Floating Gate Transistor Threshold Voltage.

Working Principle of Floating Gate Transistor.Usage Example of Floating Gate Transistor.

Control gate transistor definition